Facility for high-temperature crystals growth by micro-pulling down (μ-PD) and Czochralski methods
Technical data:
| Manufacturer: | CYBERSTAR |
| Sturt-up: | 2011 (upgrade 2014) |
| Heating: | inductive |
| Generator power: | 20 kW |
| Frequency: | 5 – 15 kHz |
| Manufacturer: | micro-pulling down (μ-PD), Czochralski |
| Growth conditions: | vacuum (up to ~ 3 x 10-6 bar) or any other gaseous atmosphere |
| Maximum temperature: | >2000°C |
| Thermal isolation: | Al2O3 or ZrO2:Mg |
| Growth rate: | from 0.01 mm/h to 99.99 mm/min (in reality, up to several mm/min) |
| Rotation rate: | from 0.1 up to 99.9 rev/min |
| The device is equipped with a system of an automatic crystal growth process control | |
Application:
The device is designed for a high-temperature single crystal growth by micro-pulling down (μ-PD) and Czochralski methods.
